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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed *High Reliability APPLICATIONS *Switching regulators *Ultrasonic generators *High frequency inverters *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage VALUE 450 UNIT V Collector Current-Continuous Base Current-Continuous w w scs .i w 400 400 7 V V V 3 A 1 40 150 -45~150 A W .cn mi e PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2929 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 IC= 1A; IB= 0.2A B 7 V VCE(sat) Collector-Emitter Saturation Voltage 0.3 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain Switching times ton tstg tf Turn-on Time w ww scs .i VEB= 7V; IC=0 VCB= 450V; IE=0 IC= 0.5A; VCE= 5V .cn mi e 20 0.9 V 0.1 mA 0.1 mA 50 1.5 IC= 3A, IB1= -IB2= 0.6A RL= 20;PW=20s Duty Cycle2% s s s Storage Time 2.0 Fall Time 0.8 isc Websitewww.iscsemi.cn 2 |
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